Ultraviolet Micro-Raman Stress Map of Polycrystalline Diamond Grown Selectivity on Silicon Substrates Using Chemical Vapor Deposition

Date

2018-05

Authors

Ahmed, Raju
Nazari, Mohammad
Hancock, Bobby Logan
Simpson, J.
Engdahl, C.
Piner, Edwin L.
Holtz, Mark

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AIP Publishing

Abstract

Polycrystalline diamond stripes, with a nominal thickness of ∼1.5 μm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping reveal high compressive stress, up to ∼0.85 GPa, at the center of the diamond stripe, and moderate tensile stress, up to ∼0.14 GPa, in the substrate close to the interface with the diamond. Compressive stresses on diamond decrease with diminishing stripe widths. The stress map is well-described using finite element simulation incorporating solely thermal expansion effects.

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Keywords

diamond, ultraviolet micro-raman stress map, chemical vapor, thermal effects

Citation

Ahmed, R., Nazari, M., Hancock, B. L., Simpson, J., Engdahl, C., Piner, E. L. & Holtz, M. W. (2018). Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectivity on silicon substrates using chemical vapor deposition. Applied Physics Letters, 112(18), 181907.

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