Donnelly, David W.Covington, Billy C.Grun, J.Hoffman, Carl A.Meyer, J. R.Manka, C. K.Glembocki, O. J.Qadri, S. B.Skelton, E. F.2010-06-022012-02-241997-08Donnelly, D. W., Covington, B. C., Grun, J., Hoffman, C. A., Meyer, J. R., Manka, C. K., Glembocki, O., Qadri, S. B., & Skelton, E. F. (1997). Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon. Journal of Applied Physics, 71(5), pp. 680-682.https://hdl.handle.net/10877/4049We present evidence that the energy introduced by a short laser pulse focused to high intensity on a small spot on the surface of neutron-transmutation-doped silicon electrically activates impurities far away from the focal spot. The activation of the impurities is measured by far-infrared spectroscopy of shallow donor levels and by magnetotransport characterization. Electrical activity is comparable to that obtained with conventional thermal annealing. X-ray rocking curve measurements show strain in the area of the focal spot, but none at large distances from the focal spot.Text3 pages1 file (.pdf)enfar-infraredspectroscopymagnetotransportx-rayathermal annealingneutron-transmutation-dopedsiliconPhysicsArticlehttps://doi.org/10.1063/1.119828