Jewel, Mohi UddinMonne, Mahmuda AkterMishra, BhagyashreeChen, Maggie Yihong2020-03-112020-03-112020-02Jewel, M. U., Monne, M. A., Mishra, B., & Chen, M. Y. (2020). Inkjet-printed molybdenum disulfide and nitrogen-doped graphene active layer high on/off ratio transistors. Molecules, 25(5), 1081.1420-3049https://hdl.handle.net/10877/9379Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS2) by multiple printing passes to construct a MoS2−NDG stack. We demonstrate top-gated fully inkjet-printed MoS2−NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO3) dielectric. A 100% inkjet-printed MoS2−NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches.Text13 pages1 file (.pdf)engraphenemolybdenum disulfideramanthin-filmscross-sectionnanosheetson/off ratiotransistorinkjet printingIngram School of EngineeringArticle© 2020 The Authors.https://doi.org/10.3390/molecules25051081This work is licensed under a Creative Commons Attribution 4.0 International License.