Stephenson, Chad A.Gillett-Kunnath, MiriamO'Brien, William A.Kudrawiec, RobertWistey, Mark A.2019-04-092019-04-092016-12-02Stephenson, C. A., Gillett-Kunnath, M., O’Brien, W. A., Kudrawiec, R. & Wistey, M. A. (2016). Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys. Crystals, 6, 159.https://hdl.handle.net/10877/7968This article belongs to the Special Issue Current and Future Directions in Crystal Growth by Molecular Beam Epitaxy.Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germyl)methane, or (H3Ge)4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE). Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE.Text15 pages1 file (.pdf)engermaniumgermanium carbidemolecular beam epitaxyPhysicsArticle© 2016 The Authors.https://doi.org/10.3390/cryst6120159This work is licensed under a Creative Commons Attribution 4.0 International License.