Hancock, Bobby LoganNazari, MohammadAnderson, J.Piner, Edwin L.Faili, F.Oh, S.Twitchen, D.Graham, S.Holtz, Mark2019-04-112019-04-112016-05-23Hancock, B. L., Nazari, M., Anderson, J., Piner, E., Faili, F., Oh, S., Twitchen, D., Graham, S. & Holtz, M. (2016). Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer. Applied Physics Letters, 108(3), 211901.https://hdl.handle.net/10877/7978Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86 ± 0.07 GPa at the free GaN surface compared to 0.23 ± 0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence.Text5 pages1 file (.pdf)enultraviolet micro-raman spectroscopydiamondchemical vapor depositionPhysicsArticlehttp://dx.doi.org/10.1063/1.4952596