Piner, EdwinSimpson, Jeffrey R.2020-10-142020-10-142016-12Simpson, J. R. (2016). <i>Growth and characterization of novel GaN high electron mobility transistor structures with enhanced two-dimensional electron gas</i> (Unpublished dissertation). Texas State University, San Marcos, Texas.https://hdl.handle.net/10877/12763Novel gallium nitride based high electron mobility transistor structures were grown using metalorganic chemical vapor deposition. Traditional GaN based HEMT structures incorporate a version of an aluminum gallium nitride / gallium nitride single crystalline heterointerface for generation of a conductive two-dimensional electron gas. The grown structures aim to enhance the properties of their two-dimensional electron gases beyond commercially available designs. Novel material alterations to the traditional HEMT structures have established a new materials platform for this technology. Growth and characterization of these novel materials are presented.Text182 pages1 file (.pdf)enMOCVDHEMTGaNDissertation