Ahmed, RajuNazari, MohammadHancock, Bobby LoganSimpson, J.Engdahl, C.Piner, Edwin L.Holtz, Mark2019-04-112019-04-112018-05-03Ahmed, R., Nazari, M., Hancock, B. L., Simpson, J., Engdahl, C., Piner, E. L. & Holtz, M. W. (2018). Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectivity on silicon substrates using chemical vapor deposition. Applied Physics Letters, 112(18), 181907.https://hdl.handle.net/10877/7979Polycrystalline diamond stripes, with a nominal thickness of ∼1.5 μm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping reveal high compressive stress, up to ∼0.85 GPa, at the center of the diamond stripe, and moderate tensile stress, up to ∼0.14 GPa, in the substrate close to the interface with the diamond. Compressive stresses on diamond decrease with diminishing stripe widths. The stress map is well-described using finite element simulation incorporating solely thermal expansion effects.Text4 pages1 file (.pdf)endiamondultraviolet micro-raman stress mapchemical vaporthermal effectsPhysicsArticlehttps://doi.org/10.1063/1.5027507https://doi.org/10.1063/1.5027507