Zhu, YunYu, QingkaiDing, Gu-QiaoXu, Xu-GuangWu, Tian-RuGong, QianYuan, Ning-YiDing, Jian-NingWang, Shu-MinXie, Xiao-MingJiang, Mian-Heng2020-04-292020-04-292014-01Zhu, Y., Yu, Q. K., Ding, G. Q., Xu, X. G., Wu, T. R., Gong, Q., Yuan, N. Y., Ding, J. N., Wang, S. M., Xie, X. M., & Jiang, M. H. (2014). Raman enhancement by graphene-Ga2O3 2D bilayer film. Nanoscale Research Letters, 9(48).1931-7573https://hdl.handle.net/10877/97622D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.Text6 pages1 file (.pdf)engrapheneraman enhancementgallium oxidechemical vapor depositionIngram School of EngineeringArticle© 2014 Zhu et al.https://doi.org/10.1186/1556-276X-9-48This work is licensed under a Creative Commons Attribution 2.0 Generic License.