Swartz, Craig H.Edirisooriya, MadhavieLeBlanc, E. G.Noriega, O. C.Jayathilaka, Pathiraja A. R. D.Ogedengbe, Olanrewaju S.Hancock, Bobby L.Holtz, MarkMyers, Thomas H.Zaunbrecher, K. N.2019-05-202019-05-202014-12-02Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, H., & Zaunbrecher, K. N. (2014). Radiative and interfacial recombination in CdTe heterostructures. Applied Physics Letters, 105(22).https://hdl.handle.net/10877/8204Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non- radiative recombination rates by examining the dependence of photoluminescence (PL) on both ex-citation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10 10 cm-2 and carrier life- times as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10 -10 cm3s-1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.Text4 pages1 file (.pdf)endouble heterostructureslaser theoryheterostructuressemiconductorschemical compoundsoptical metrologyleptonsPhysicsArticlehttps://doi.org/10.1063/1.4902926