Swartz, Craig H.Zaunbrecher, K. N.Sohal, SandeepLeBlanc, E. G.Edirisooriya, MadhavieOgedengbe, Olanrewaju S.Petersen, John E.Jayathilaka, Pathiraja A. R. D.Myers, Thomas H.Holtz, MarkBarnes, T. M.2019-05-202019-05-202016-10-28Swartz, C. H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., & Barnes, T. M. (2016). Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. Journal of Applied Physics, 120(16).https://hdl.handle.net/10877/8207CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 10 16cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.Text7 pages1 file (.pdf)enphotoluminescenceohmic contactsneutron cross sectionchemical elementsphotocarrierPhysicsArticlehttps://doi.org/10.1063/1.4966574