The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric

Date

2008-05

Authors

Yust, Brian

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Abstract

In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices.

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Keywords

Mosfets, High-k dialectric, Breakdown, Charge pumping

Citation

Yust, B. (2008). <i>The degradation and time-dependent breakdown of P-type Mosfets with a high-k dielectric</i> (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.

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