Electrical and Optical Properties of RRAM




Cui, Yubo

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Recently several electronic devices have achieved significant enhancements that have been attributed to an oxidized NiFe layer. A study on lateral spin valves, was found to have an increased magnetoresistance after leaving it exposed to air. The enhancements were attributed to the partly oxidation of a NiFe layer [1]. Even more recently the turn on voltages of Hematite based water splitting devices was lowered to record low of .61 V with the addition of an amorphous NiFeOx layer [1]. We investigated the optical properties of NixFe1-x-oxide thin films that were deposited by reactive RF sputtering on different substrates. Deposition was performed in an AJA Magnetron System using a gas flow of 10 sccm and a sputter pressure of 10-3 Torr. NixFe1-xOxide films were made for different substrate temperatures (room temperature-588 degrees Celsius), different deposition times (38-1200s), and different Oxygen flow rates (5-20%). Films with two different Fe concentrations were studied (10-19 at.%). The optical properties of the films from the UV to the far IR were studied by ellipsometer as a function of the deposition parameters. The electrical properties were studied by the linear four-point probe technique. Chemical composition, morphology and roughness were studied by EDAX, SEM, and AFM. In addition, three real RRAM memory cell device test wafers were made.



PyO, RRAM, Electrical and optical properties


Cui, Y. (2016). <i>Electrical and optical properties of RRAM</i> (Unpublished thesis). Texas State University, San Marcos, Texas.


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