Raman Enhancement by Graphene-Ga2O3 2D Bilayer Film




Zhu, Yun
Yu, Qingkai
Ding, Gu-Qiao
Xu, Xu-Guang
Wu, Tian-Ru
Gong, Qian
Yuan, Ning-Yi
Ding, Jian-Ning
Wang, Shu-Min
Xie, Xiao-Ming

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2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.



graphene, raman enhancement, gallium oxide, chemical vapor deposition, Ingram School of Engineering


Zhu, Y., Yu, Q. K., Ding, G. Q., Xu, X. G., Wu, T. R., Gong, Q., Yuan, N. Y., Ding, J. N., Wang, S. M., Xie, X. M., & Jiang, M. H. (2014). Raman enhancement by graphene-Ga2O3 2D bilayer film. Nanoscale Research Letters, 9(48).


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