Radiative and Interfacial Recombination in CdTe Heterostructures




Swartz, Craig H.
Edirisooriya, Madhavie
LeBlanc, E. G.
Noriega, O. C.
Jayathilaka, Pathiraja A. R. D.
Ogedengbe, Olanrewaju S.
Hancock, Bobby L.
Holtz, Mark
Myers, Thomas H.
Zaunbrecher, K. N.

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American Institute of Physics


Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non- radiative recombination rates by examining the dependence of photoluminescence (PL) on both ex-citation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10 10 cm-2 and carrier life- times as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10 -10 cm3s-1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.



double heterostructures, laser theory, heterostructures, semiconductors, chemical compounds, optical metrology, leptons


Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, H., & Zaunbrecher, K. N. (2014). Radiative and interfacial recombination in CdTe heterostructures. Applied Physics Letters, 105(22).


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