Novel Growth of Chemical Vapor Deposited Graphene on Molten Tin Metal
Date
2021-08
Authors
Adetayo, Adeniji
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Abstract
Since the discovery of two-dimensional (2D) graphene in 2004, it has attracted increasing research interest around the globe due to its remarkable properties and numerous applications. Chemical vapor deposition (CVD) has been widely used to grow graphene owing to its scalability, controllability, and low-cost features. Several studies have reported CVD graphene growth on solid substrates with recent developments on the use of liquid substrates. However, while there are many studies reporting growth on solid and liquid copper substrates, no study has reported mass production of graphene combined with uniform film growth on molten tin substrate. It is believed that using the CVD technique, large and uniform sheets of graphene can be produced just like glass.
In this research, CVD graphene films were synthesized on molten tin (Sn) at ambient pressure under varying growth times (5–15 min), precursor flow rates (CH4:H2 of 0.1–0.5), and temperatures (950–1100 °C). Characterization of graphene films through microscopy and spectroscopy techniques revealed the effect of growth parameters on the quality and number of graphene layers. Graphene films of bilayer to a few layers having high quality were synthesized. Furthermore, graphene film transfer using a direct transfer approach to an insulating mica substrate without the use of toxic chemicals was accomplished with graphene films of ~ 2.7 nm thickness and a high electrical conductivity of ~ 7.1 × 105 S/m. Graphene growth on Sn is a scalable process for high-quality mass production of graphene films with large areas for applications in electronic devices.
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Keywords
chemical vapor deposition, graphene, molten tin
Citation
Adetayo, A. (2021). Novel growth of chemical vapor deposited graphene on molten tin metal (Unpublished dissertation). Texas State University, San Marcos, Texas.