Far-infrared Spectroscopic, Magnetotransport, and X-ray Study of Athermal Annealing in Neutron-transmutation-doped Silicon

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dc.contributor.authorDonnelly, David W.
dc.contributor.authorCovington, Billy C.
dc.contributor.authorGrun, J.
dc.contributor.authorHoffman, Carl A.
dc.contributor.authorMeyer, J. R.
dc.contributor.authorManka, C. K.
dc.contributor.authorGlembocki, O. J.
dc.contributor.authorQadri, S. B.
dc.contributor.authorSkelton, E. F.
dc.date.accessioned2010-06-02T10:21:02Z
dc.date.available2012-02-24T10:21:03Z
dc.date.issued1997-08
dc.description.abstractWe present evidence that the energy introduced by a short laser pulse focused to high intensity on a small spot on the surface of neutron-transmutation-doped silicon electrically activates impurities far away from the focal spot. The activation of the impurities is measured by far-infrared spectroscopy of shallow donor levels and by magnetotransport characterization. Electrical activity is comparable to that obtained with conventional thermal annealing. X-ray rocking curve measurements show strain in the area of the focal spot, but none at large distances from the focal spot.
dc.description.departmentPhysics
dc.formatText
dc.format.extent3 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationDonnelly, D. W., Covington, B. C., Grun, J., Hoffman, C. A., Meyer, J. R., Manka, C. K., Glembocki, O., Qadri, S. B., & Skelton, E. F. (1997). Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon. Journal of Applied Physics, 71(5), pp. 680-682.
dc.identifier.doihttps://doi.org/10.1063/1.119828
dc.identifier.urihttps://hdl.handle.net/10877/4049
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.sourceJournal of Applied Physics, August 1997, Vol. 71, No. 5, pp. 680-682.
dc.subjectfar-infrared
dc.subjectspectroscopy
dc.subjectmagnetotransport
dc.subjectx-ray
dc.subjectathermal annealing
dc.subjectneutron-transmutation-doped
dc.subjectsilicon
dc.subjectPhysics
dc.titleFar-infrared Spectroscopic, Magnetotransport, and X-ray Study of Athermal Annealing in Neutron-transmutation-doped Silicon
dc.typeArticle

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